TB6079AFKG 2010-11-18 1 toshiba bipolar linear integrat ed cir cuit silicon monolithic TB6079AFKG shock sensor ic TB6079AFKG is multi op amp ic for analog signal processing of a shock sensor. feature ? TB6079AFKG is operated in the range; 2.3 v ~ 5.5 v dc in power supply voltage. ? tow op-amps and one reference amp are built independently, for utility of electrical design (se tting the gain or fc of filter). ? the window comparator has a hysteresis which width is about 60mv. ? very small package : vssop16-p-0030-0.50 (0.50 mm pitch) block diagram note: some of the functional blocks, ci rcuits, or constants in the block di agram may be omitted or simplified for explanatory purpose. please use re f-amp only as buffer amplifier. vssop16-p-0030-0.50 weight: 0.02 g (typ.) op-amp1 vcc gnd gnd + - + - + - + - (h) (l) comp_amp 6 5 4 3 2 1 7 8 9 + - op-amp2 11 + - 16 15 14 13 12 10 vh 1.2v vm 0.8v vl 0.4v rp rn rout cin cout test det ao2 ao1 ap2 an2 vcc nc an1 ap1 ref_amp window_comparator iref/vref
TB6079AFKG 2010-11-18 2 pin function pin no. pin name function 1 gnd ground terminal 2 cin input terminal of window comparator 3 cout output terminal of comparator amp 4 det output terminal of window comparator (output = "l", when voltage of input cross the thresh voltage.) 5 test test terminal (* connec t the test terminal to gnd) 6 rp non-inverting input terminal of reference amp 7 rn inverting input terminal of reference amp 8 rout output terminal of reference amp 9 vcc power supply voltage 10 ao2 output terminal of op amp2 11 an2 inverting input terminal of op amp2 12 ap2 non-inverting input terminal of op amp2 13 nc no connection terminal 14 ao1 output terminal of op amp1 15 an1 inverting input terminal of op amp1 16 ap1 non-inverting input terminal of op amp1 pin connection (top view) gnd cin 16 15 14 13 12 11 10 9 8 7 6 5 1 2 3 4 cout det rp rout rn test ap1 vcc an1 ao2 ao1 an2 nc ap2
TB6079AFKG 2010-11-18 3 absolute maximum ratings (ta = 25c) characteristics symbol rating unit power supply voltage av cc 6 v power dissipation p d 300 mw storage temperature t stg ? 55 ~ 150 c input voltage v in ? 0.3 ~ vcc+0.3 v output voltage v out ? 0.3 ~ vcc+0.3 v * except pin 4 note: the absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. do not exceed any of these ratings. exceedi ng the rating(s) may cause devise breakdown, damage or deterioration, and may result injury by explosion or combustion. operating condition characteristics symbol rating unit power supply voltage v cc 2.3 ~ 5.5 v operating temperature t opr ? 25 ~ 85 c note: the ic may be destroyed due to short circuit between ad jacent pins, incorrect orient ation of device's mounting, connecting positive and negative power supply pins wrong wa y round, air contamination fault, or fault by improper grounding.
TB6079AFKG 2010-11-18 4 electrical characteristics --- guaranteed data (unless otherwise specified, v cc = 3.3 v, ta = 25c) characteristics symbol test condition min typ. max unit output supply voltage 4pin pull-up resistance connection point ? ? 5.5 v supply current i cc no input signal ? 2.7 4.0 ma op-amp characteristics note: (*1): definition of direction of current is as follows; + is source current, - is sink current. (op-amp1/2) characteristics symbol test condition min typ. max unit input bias current i ib vcc/2 (*1) ? 70 0 70 na input offset voltage voff vcc/2 ? 5 0 5 mv maximum input voltage vin ? 0.1 ? vcc?0.3 v v oh1 rl = 20k vcc ?0.2 ? ? v v ol1 rl = 20k ? ? 0.2 v v oh2 rl = 2k vcc ?0.3 ? ? v maximum output voltage v ol2 rl = 2k ? ? 0.3 v note: rl connection point is vcc/2. (ref-amp) characteristics symbol test condition min typ. max unit input bias current i ib r vcc/2 (*1) ? 35 80 na input offset voltage v off r vcc/2 ? 5 0 5 mv output voltage shift vosr il = 0.5ma ? 5 0 5 mv (comp-amp) characteristics symbol test condition min typ. max unit input bias current i ib c (?1) ? 50 110 na output dc voltage voc ? 0.74 0.8 0.86 v output sink current isic vol = 0.3v 0.5 1.0 ? ma output source current isoc voh = vcc ?0.3v 0.15 0.19 ? ma (window comparator) characteristics symbol test condition min typ. max unit hysteresis width vwhys ? 30 60 80 mv detection voltage level (high side) vwsh ? 1.11 1.2 1.29 v detection voltage level (low side) vwsl ? 0.37 0.4 0.43 v output sink current iwsi vol = 0.3 v 0.3 1.0 ? ma
TB6079AFKG 2010-11-18 5 electrical characteristics--- refere nce data for application (note) (op-amp1/2) characteristics symbol test condition min typ. max unit cut-off frequency f t ? ? 1.5 ? mhz open-loop gain gvo ? ? 100 ? db (ref-amp) characteristics symbol test condition min typ. max unit cut-off frequency f tr ? ? 1.2 ? mhz open-loop gain gvor ? ? 80 ? db (comp-amp) characteristics symbol test condition min typ. max unit cut-off frequency f tc ? ? 2.0 ? mhz open-loop gain gvoc ? ? 100 ? db feedback resistance (recommend) ? 30 ? 500 k ? (window comparator) characteristics symbol test condition min typ. max unit delay time t d ? ? ?2 ? sec note: the ?reference data for application? is not performed the electrical test.
TB6079AFKG 2010-11-18 6 typical performance characteristics (unless otherwise specified, v cc = 3.3 v, ta = 25c) opamp1,2 input current vs input voltage opamp1,2 output voltage vs load resistance opamp1,2 output voltage vs supply voltage opamp1,2 gain vs frequency opamp1,2 phase vs frequency(10 10khz) opamp1,2 phase vs frequency(10 10mhz)
TB6079AFKG 2010-11-18 7 typical performance characteristics (unless otherwise specified, v cc = 3.3 v, ta = 25c) note: the ?typical performance characteristics? shown in this document are provided for reference purposes only. especially, thorough evaluation is requir ed on the phase of mass production design. ref amp output voltage vs input voltage comp amp offset voltage vs feedback resistance *this figure is only usage for buffer amplifier.
TB6079AFKG 2010-11-18 8 package dimension vssop16-p-0030-0.50 unit: millimeter weight: 0.02 g (typ.)
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